In stock
G3R40MT12K
GeneSiC
N-Channel Silicon Carbide (SiC) Power MOSFET, 1200V, 40A
Specifications
CategorySiC MOSFET
PackageTO-247-3
PolarityN-Channel
TechnologySilicon Carbide (SiC)
ConfigurationSingle
On Resistance75mΩ (typical)
Drain Source Voltage1200V
Gate Threshold Voltage2.5V (typical)
Continuous Drain Current40A
3
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