In stockBrokered
NTHL080N120SC1
onsemi
N-channel silicon carbide (SiC) power MOSFET, 1200V, 80mΩ, TO-247 4-lead package
Specifications
CategorySiC MOSFET
PackageTO-247-4L
PolarityN-channel
Rds On Typ80mΩ
TechnologySilicon Carbide (SiC)
Package TypeTO-247-4L (Kelvin source)
Drain Source Voltage1200V
Gate Threshold Voltage~4.5V
Continuous Drain Current~31A @ 25°C
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