In stock
SCT3080ALGC11
Rohm
N-channel silicon carbide (SiC) power MOSFET, 650V, 80mΩ, 4-lead TO-247 package
Specifications
CategorySiC MOSFET
PackageTO-247-4L
PolarityN-channel enhancement mode
TechnologySilicon Carbide (SiC)
Package TypeTO-247-4L (4-lead Kelvin source)
ConfigurationN-channel
On Resistance80mΩ
Gate Source Voltage±22V
Drain Source Voltage650V
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